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 PD-94640
Plug N DriveTM Integrated Power Module for Appliance Motor Drive
Description
IRAMS10UP60A Series
International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages.
Features
* * * * * * * * * * * * Integrated Gate Drivers and Bootstrap Diodes. Temperature Monitor Temperature and Overcurrent shutdown Fully Isolated Package. Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels Low side IGBT emitter pins for current conrol Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.4~0.75kW / 85~253 Vac
Absolute Maximum Ratings
Parameter VCES Io @ T C - 25 o C Io @TC - 100 C Ipk Fp Pd Viso TJ
(IGBT & Diodes) o
Description Maximum IGBT Blocking Voltage RMS Phase Current RMS Phase Current Maximum Peak Phase Current (tp<100ms) Maximum PWM Carrier Frequency Maximum Power dissipation per Phase Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M3 screw)
Max. Value 600 10 5 15 20 20 2000 -40 to +150 -40 to +150 0.8 to 1.0
Units V A kHz W VRMS C Nm
TJ (Driver IC) T
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2/24/03
1
IRAMS10UP60A
Internal Electrical Schematic - IRAMS10UP60A
V+ (10)
VRU (12) VRV (13) VRW (14)
Rg1
Rg3
Rg5
VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2)
23 VS1
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
R3 HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) T/Itrip (21) RT THERMISTOR
24 HO1 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LO2 15
Rg4 Rg6
LO3 14
Driver IC
R1
R2 VDD (22) VSS (23)
C
2
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IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES VF M Param e t e r Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Min 600 --------------Typ --0.57 1. 7 2. 0 5 10 1. 8 1. 3 Max ----2.0 2.4 15 40 2.35 1.7 Units Conditions V V/C V VIN =0V, IC=20A VIN =0V, IC=1.0mA (25C - 150C) TJ =25C, VDD =15V IC=5A IC=5A TJ =150C VIN =5V, V + =600V VIN =5V, V + =600V, T J=150C IC=5A IC=5A, TJ=150C
A
V
Inverter Section Switching Characteristics @ TJ = 25C
Symbol Eon Eoff Etot Eon Eoff Etot Erec t rr RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-on Swtiching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min ----------------Typ 155 70 225 260 130 390 30 95 Max 180 90 270 300 160 460 40 110 Units Conditions IC=5A, V+ =400V VDD =15V, R G =33, L=2mH See CT1 TJ=25C TJ=150C
J
J J
ns
Energy losses include "tail" and diode reverse recovery TJ=150C, V+ =400V VDD =15V, IF =5A, L=2mH, R G =33 TJ=150C, IC=5A, VP =600V V+=480V, V DD =+15V to 0V R G =33 See CT3
FULL SQUARE
SCSOA
10
---
---
s
TJ=150C, VP =600V, R G =33, V +=360V, VDD =+15V to 0V
See CT2
Thermal Resistance
Symbol R th(J-C) Param e t e r Junction to case thermal resistance, each IGBT under inv e rter operation. Junction to case thermal resistance, each Diode under inv e rter operation. Thermal Resistance case to sink M in --Typ 4. 2 Max 4.7 Units Conditions C/W Flat, greased surface. Heatsink compound thermal C/W conductiv ity - 1W/mK C/W
R th(J-C) R th(C-S)
-----
5. 5 0. 1
6.5 ---
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3
IRAMS10UP60A
Absolute Maximum Ratings Driver function
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS. (Note 1) 14
Symbol V
+
Definition High Side offset voltage High Side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, T/I TRI P Juction Temperature
Min -0.3 -0.3 -0.3 -0.3 -40
Max 600 20 20 7 150
Units V V V V C
VB1,2,3 VDD VIN TJ
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS . The VS offset rating is tested with all supplies biased at 15V differential. (Note 1)
Sym bol VB1,2,3 VS1,2,3 VD D VITRIP VIN
De finition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage T/I TRI P input voltage Logic input voltage LIN, HIN
M in VS +12 Note 2 12 VSS VSS
M ax VS +20 450 20 VSS +5 VSS +5
Units V
V V
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3) = 15V unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1)
Sym bol VIN,th+ VIN,thVCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH IQBS IQCC ILK II N + V(T/ITRIP)
De finition Positive going input threshold Negative going input threshold VCC and VBS supply undervoltage Positive going threshold VCC and VBS supply undervoltage Negative going threshold VCC and VBS supply undervoltage Ilockout hysteresis Quiescent VBS supply current Quiscent V CC supply current Offset Supply Leakage Current Input bias current (OUT=HI or OUT=LO) T/ITRIP threshold Voltage (OUT=HI or OUT=LO) (Note 3)
M in --0.8 10.6 10.4 ----------3.85
Typ ----11.1 10.9 0. 2 70 1. 6 --120 4. 3
M ax 3 --11.6 11.4 --120 2.3 50 --4.75
Units V V V V V
A A A A
V
4
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IRAMS10UP60A
Dynamic Electrical Characteristics
VDD = VBS = VBIAS = 15V, Io= 1A, VD=9V , PWMin= 2kHz, VINON = VIN,th+, VINOFF = VIN,thTA = 25C unless otherwise specified.
Symbol TON TOFF DT I/TTrip TFCLTRL
Definition Input to output propagation turn-on delay time (see fig.11) Input to output propagation turn-off delay time (see fig. 11) Dead Time T/I Trip to six switch to turn-off propagation delay (see fig. 2) Post ITrip to six switch to turn-off clear time (see fig. 2)
M in -
Typ 470 615 300 750 9
Max -
Units ns ns ns ns ms
Internal NTC - Thermistor Characteristics
Parameter R25 R125 R25/50 Resistance Resistance Resistance Typ 100 +/- 5% 2.522 + 17.3 % /- 14.9% 4250 +/- 3% -40 / 125 1 Units k k k C mW/C TC = 25C Conditions TC = 25C TC = 125C R 2 = R 1e
[B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Note 1: For more details, see IR21365 data sheet Note 2: Logic operational for Vs from COM-5V to COM+600V. Logic stata held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)
Thermistor Built-in IRAMS10UP60A
VCC (22)
NTC
IR21365
12K T/ITRIP (21) 4.3K VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.
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5
IRAMS10UP60A
Figure1. Input/Output Timing Diagram
HIN1,2,3 LIN1,2,3 HO1,2,3 LO1,2,3 T/Itrip U,V,W
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
Vbus
Itrip HIN1,2,3
0 1 1 X
LIN1,2,3
1 0 1 X
U,V,W
Vbus 0 X X
Hin1,2,3 (15,16,17)
IC Driver
Ho U,V,W (8,5,2) Lo
0 0 0 1
Lin1,2,3 (18,19,20)
6
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IRAMS10UP60A
Figure 2. T/ITrip Timing Waveform
HIN1,2,3
LIN1,2,3
T/Itrip
50%
U,V,W
50%
tfltclr
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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7
IRAMS10UP60A
Module Pin-Out Description
P in 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Na m e VB3 W ,VS 3 na VB2 V,VS2 na VB1 U,V S 1 na V+ na LE1 LE2 LE3 H IN1 H IN2 H IN3 LIN 1 LIN 2 LIN 3 T / Itr ip VCC VSS D e s c r ip t io n H i g h S i d e F l o a t i n g S u p p ly V o lta g e 3 O u t p u t 3 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none H i g h S i d e F l o a t i n g S u p p ly vo lta g e 2 O u t p u t 2 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none H i g h S i d e F l o a t i n g S u p p ly vo lta g e 1 O u t p u t 1 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none P o s itive B u s Input V o lta g e none L o w S i d e E m itte r C o n n e c tio n - P h a s e 1 L o w S i d e E m itte r C o n n e c tio n - P h a s e 2 L o w S i d e E m itte r C o n n e c tio n - P h a s e 3 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 1 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 2 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 3 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 1 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 2 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 3 T e m p e r a t u r e M o n ito r a n d S h u t - d o w n P in + 1 5 V M a in S u p p ly N e g a tive M a in S u p p ly
8
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IRAMS10UP60A
Typical Application Connection IRAMS10UP60A
VBW VSW U
BOOT-STRAP CAPACITORS
3-ph AC MOTOR V
VBV VSV
CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN
W
VBU VSU
V+
DC BUS CAPACITORS
LeU
PHASE LEG CURRENT SENSE
LeV LeW HINU HINV HINW
Driver IC
CONTROLLER
LINU LINV LINW 5k 3.3 V 1m 4.3K 8.2k 10m 0.1 m T/ITRIP VDD(15 V) VSS NTC 12k
TEMP SENSE
O/C SENSE (ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between Vcc-Gnd and Vb-Vs terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1mF, are strongly recommended. 3. Low inductance shunt resistors should be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible. 4. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or application note AN-1044. 5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in inverter.
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9
IRAMS10UP60A
10
MAX RMS OUTPUT CURRENT / PHASE (A)
VBUS = 400 V, TJ=TJ Max C, Modulation Depth = 0.8, PF = 0.6
9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12
Tc = 100 C Tc = 110 C Tc = 120 C
14
16
18
20
PWM SWITCHING FREQUENCY (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency VBUS=400V, Tj=150C, Modulation Depth=0.8, PF=0.6
7 6 Maximum RMS Phase Current (A) 5 4 3 2 1 0 1 10 Motor Current Modulation Frequency (Hz) 100 Switching Frequency : 12KHz 16KHz 20KHz
Figure 4. Maximum sinusoidal phase current as function of modulation frequency VBUS=400V, Tj=150C, Tc=100C, Modulation Depth=0.8, PF=0.6
10
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IRAMS10UP60A
16 14 12 CURRENT (A) 10 8 150 6 100 4 2 0 -2 0 0.05 0.1 0.15 0.2 TIME (s) 0.25 0.3 0.35 0.4 50 0 -50 CURRENT VOLTAGE TURN-ON AT Tj = 125 C, Rg = 33 OHM, 310 V 350 300 250 VOLTAGE (V) 200
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125C, VBUS=310V
6
TURN-OFF AT Tj = 125 C, Rg = 33 OHM, 310 V
360
5
300
4 CURRENT (A)
CURRENT VOLTAGE
240 VOLTAGE (V)
3
180
2
120
1
60
0
0
-1 0 0.2 0.4 TIME (s) 0.6 0.8 1
-60
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125C, VBUS=310V
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11
IRAMS10UP60A
120 100 THERMISTOR RESISTANCE (k) MINIMUM NOMINAL MAXIMUM
80
60
40
20
0 0 20 40 60 80 TEMPERATURE (C) 100 120 140
Figure 7. Variation of thermistor resistance with temperature
4 3.5 3 V SENSE (V) 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TEMPERATURE (C) NOMINAL MINIMUM MAXIMUM
Figure 8. Variation of temperature sense voltage with thermistor temperature using external bias resistance of 4.3K, Vcc=15V
12
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IRAMS10UP60A
200 180 IGBT JUNCTION TEMPERATURE (C) 160 140 120 100 80 60 40 80 90 100 110 120 130 140 THERMISTOR TEMPERATURE (C) 150 160 170
Figure 9. Estimated maximum IGBT junction temperature with thermistor temperature
14 12 10 8 6 4 2 0 0 5 10 15 SWITCHING FREQUENCY (kHz) 20 25 RECOMMENDED MINIMUM VALUE OF BOOTSTRAP CAPACITOR VERSUS SWITCHING FREQUENCY, VCC = 15 V
CAPACITANCE ( F)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency
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13
IRAMS10UP60A
Figure 11. Switching Parameter Definitions
VCE
50% HIN/LIN
IC
IC
90% IC
VCE HIN/LIN
90% IC
HIN/LIN
50% HIN/LIN
10% VCE
10% IC
10% IC
TON
tr
Figure 11a. Input to Output propagation turn-on delay time
TOFF
tf
Figure 11b. Input to Output propagation turn-off delay timet
IF VCE HIN/LIN
Irr trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS10UP60A
Vbus 5V
Ho
Hin1,2,3
IC Driver Lo
U,V,W
Lin1,2,3
Figure CT1. Switching Loss Circuit
Vbus
Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3
IC Driver
Ho
IN
PWM=4s
U,V,W
Lo
Io
Io
Figure CT2. S.C.SOA Circuit
Vbus
Hin1,2,3 1k VCC 5VZD 10k
IC Driver
Ho
IN
U,V,W
Lo
Io
Lin1,2,3 IN
Io
Figure CT3. R.B.SOA Circuit
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15
IRAMS10UP60A
Package Outline
note 2 note 3
027-E2D24
note 1
Standard pin leadforming option
Notes: Dimensions in mm 1 - Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking
16
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IRAMS10UP60A
Package Outline
note 3
note 2
027-E2D24
note 1
Pin leadforming option -2
Notes: Dimensions in mm 1 - Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02
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17


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